Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

被引：16
作者：
Liu, Yichun [1 ,2 ]
Xu, Haiyang [1 ,2 ]
Liu, Chunyang [1 ,2 ]
Liu, Weizhen [1 ,2 ]
机构：
[1] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
[2] NE Normal Univ, Key Lab UV Light Emitting Mat & Technol, Minist Educ, Changchun 130024, Peoples R China
来源：
CHINESE SCIENCE BULLETIN | 2014年 / 59卷 / 12期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
ZnO; Heterojunction; Ultraviolet light-emitting devices; Progress; ELECTROLUMINESCENCE; DIODES; FABRICATION; GAN;
D O I：
10.1007/s11434-014-0206-9
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Wide bandgap (3.37 eV) and high exciton-binding energy of ZnO (60 meV) make it a promising candidate for ultraviolet light-emitting diodes (LEDs) and low-threshold lasing diodes (LDs). However, the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p-n homojunction LEDs. An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials (such as p-GaN) or building new device structures. In this article, we will briefly review the recent progress in ZnO LEDs/LDs based on p-n heterostructures and metal-insulator-semiconductor heterostructures. Some methods to improve device efficiency are also introduced in detail, including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
引用
收藏
页码：1219 / 1227
页数：9
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