High-Performance Nanowire Oxide Photo-Thin Film Transistors

被引：44

作者：

Ahn, Seung-Eon ^{[1
]}

Jeon, Sanghun ^{[2
,3
]}

Jeon, Youg Woo ^{[1
]}

Kim, Changjung ^{[1
]}

Lee, Myoung-Jae ^{[1
]}

Lee, Chang-Won ^{[1
]}

Park, Jongbong ^{[1
]}

Song, Ihun ^{[1
]}

Nathan, Arokia ^{[4
]}

Lee, Sungsik ^{[5
]}

Chung, U-In ^{[1
]}

机构：

[1] Samsung Elect Co, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[2] Dept Display & Semicond Phys, Sejong 339700, South Korea

[3] Dept Appl Phys, Sejong 339700, South Korea

[4] Univ Cambridge, Dept Engn, Ctr Adv Photon & Elect, Cambridge CB3 0FA, England

[5] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 39期

关键词：

amorphous oxide semiconductors; photosensors; thin-film transistors; phototransistors; displays; transistors; PHOTOCONDUCTIVITY; PHOTORESPONSE;

D O I：

10.1002/adma201301102

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing. The device characteristics are good, including endurance of up to 106 test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：5549 / 5554

页数：6

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