Observation of He bubbles in ion irradiated fusion materials by conductive atomic force microscopy

被引:11
作者
Fan, Hongyu [1 ]
Li, Ruihuan [2 ]
Yang, Deming [1 ,3 ]
Wu, Yunfeng [1 ]
Niu, Jinhai [1 ]
Yang, Qi [1 ]
Zhao, Jijun [2 ]
Liu, Dongping [1 ,4 ]
机构
[1] Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China
[2] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China
[3] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Jilin, Peoples R China
[4] Xiamen Univ, Fujian Key Lab Plasma & Magnet Resonance, Dept Elect Sci, Sch Phys & Mech & Elect Engn, Xiamen 361005, Fujian, Peoples R China
基金
美国国家科学基金会;
关键词
TOTAL-ENERGY CALCULATIONS; MOLECULAR-DYNAMICS; COMPOSITES; TEMPERATURE;
D O I
10.1016/j.jnucmat.2013.05.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a non-destructive conductive atomic force microscope combined with the Ar+ etching technique, we demonstrate that nanoscale and conductive He bubbles are formed in the implanted layer of single-crystalline 6H-SiC irradiated with 100 keV He+. We find that the surface swelling of irradiated SiC samples is well correlated with the growth of elliptic He bubbles in the implanted layer. First-principle calculations are performed to estimate the internal pressure of the He bubble in the void of SiC. Analysis indicates that nanoscale He bubbles acting as a captor capture the He atoms diffusing along the implanted layer at an evaluated temperature and result in the surface swelling of irradiated SiC materials. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:54 / 58
页数:5
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