Degradation Mechanisms of High-Power LEDs for Lighting Applications: An Overview

被引:48
作者
Meneghini, Matteo [1 ]
Dal Lago, Matteo [1 ]
Trivellin, Nicola [1 ]
Meneghesso, Gaudenzio [1 ]
Zanoni, Enrico [1 ]
机构
[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
关键词
Degradation; light-emitting diode (LED); lighting; reliability; EMITTING-DIODES; GAN; IDENTIFICATION; RELIABILITY; FAILURE;
D O I
10.1109/TIA.2013.2268049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports on the degradation mechanisms that limit the reliability of high-power light-emitting diodes (LEDs) for lighting applications. The study is based on the experimental characterization of state-of-the-art LEDs fabricated by leading manufacturers. We demonstrate that, despite high potential reliability, high-power LEDs may suffer from a number of degradation mechanisms that affect the stability of the blue semiconductor LED chip and of the phosphor layer used for the generation of white light. More specifically, we describe the following relevant mechanisms: 1) the optical degradation of LEDs, due to an increase in the nonradiative recombination rate, which can be correlated to modifications in the forward-bias current-voltage characteristics; 2) the variation in forward voltage, due to the increase in series resistance; 3) the optical degradation of phosphor layers used for blue-to-white light conversion; and 4) the failure of LEDs submitted to "hot plugging," which is the direct connection of an LED chain to an energized power supply, due to the generation of high current spikes. Results provide an overview on the failure mechanisms that limit the reliability of state-of-the-art LEDs and on the role of current and temperature in determining the failure of the devices.
引用
收藏
页码:78 / 85
页数:8
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