A Switching Ringing Suppression Scheme of SiC MOSFET by Active Gate Drive

This paper proposes an Active Gate Drive (AGD) to reduce unwanted switching ringing of Silicon Carbide (SiC) MOSFET module with a rating of 120 A and 1200 V. While SiC MOSFET can be operated under high switching frequency and high temperature with very low power losses, one of the key challenges for SiC MOSFET is the electromagnetic interference (EMI) caused by steep switching transients and continuous switching ringing. Compared to Si MOSFET, the higher rate of SiC MOSFET drain current variation introduces worse EMI problems. To reduce EMI generated from the switching ringing, this paper investigates the causes of switching ringing by considering the combined impact of parasitic inductances, capacitances, and low circuit loop resistance. In addition, accurate mathematical expressions are established to explain the ringing behavior and quantitative analysis is carried out to investigate the relationship between the switching transient and gate drive voltage. Thereafter, an AGD method for mitigating SiC MOSFET switching ringing is presented. Substantially reduced switching ringing can be observed from circuit simulations. As a result, the EMI generation is mitigated.