Stochastic Modeling-Based Variability Analysis of On-Chip Interconnects

被引:81
|
作者
Vande Ginste, Dries [1 ]
De Zutter, Daniel [1 ]
Deschrijver, Dirk [2 ]
Dhaene, Tom [2 ]
Manfredi, Paolo [3 ]
Canavero, Flavio [3 ]
机构
[1] Univ Ghent, Electromagnet Grp, Dept Informat Technol, B-9000 Ghent, Belgium
[2] Ghent Univ IBBT, Dept Informat Technol, Surrogate Modeling Lab, B-9050 Ghent, Belgium
[3] Politecn Torino, Dipartimento Elettron, EMC Grp, I-10129 Turin, Italy
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2012年 / 2卷 / 07期
关键词
Multiconductor transmission lines (MTLs); on-chip interconnects; stochastic Galerkin method (SGM); variability analysis; VECTOR; PARAMETERS; LINES;
D O I
10.1109/TCPMT.2012.2192274
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a novel stochastic modeling strategy is constructed that allows assessment of the parameter variability effects induced by the manufacturing process of on-chip interconnects. The strategy adopts a three-step approach. First, a very accurate electromagnetic modeling technique yields the per unit length (p.u.l.) transmission line parameters of the on-chip interconnect structures. Second, parameterized macromodels of these p.u.l. parameters are constructed. Third, a stochastic Galerkin method is implemented to solve the pertinent stochastic telegrapher's equations. The new methodology is illustrated with meaningful design examples, demonstrating its accuracy and efficiency. Improvements and advantages with respect to the state-of-the-art are clearly highlighted.
引用
收藏
页码:1182 / 1192
页数:11
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