Extremely Low Losses 14xx Single Mode Laser Diode leading to 550 mW Output Power Module with 0-75°C Case Temperature and 10 W Consumption

被引：2

作者：

Burie, J. -R. ^{[1
]}

Garabedian, P. ^{[1
]}

Starck, C. ^{[1
]}

Pagnod-Rossiaux, P. ^{[1
]}

Bettiati, M. ^{[1
]}

Do Nascimento, M. ^{[1
]}

Reygrobellet, J. -N ^{[1
]}

Bertreux, J. -C ^{[1
]}

Laruelle, F. ^{[1
]}

机构：

[1] 3S PHOTON, F-91625 Nozay, France

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS X | 2012年 / 8241卷

关键词：

1480; nm; 14xx; laser diode; Raman amplification; FBG stabilized;

D O I：

10.1117/12.906405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power 14xx laser pumps are more and more required for eye safe industrial, medical, safety and defense applications as well as for increased telecom network capability (e. g. for 100 Gb Ethernet). However, this need of high power requires to control the overall power consumption in a range in line with systems requirements. In this respect, 3S PHOTONICS has developed a 14xx nm single mode laser diode with record internal losses of 1.5 cm(-1) compared to the 2.7 cm(-1) reported up to now. These lasers are based on p/nBH technology and use the asymmetric waveguide concept to reduce internal losses. The record loss value, coupled to an internal efficiency higher than 0.8, allows realization lasers of 3 mm length with external efficiency higher than 0.5 W.A(-1) at 25 degrees C in AR/HR coating configuration. Modules using direct coupling technology were realized. High coupling efficiency is obtained thanks to the 8 degrees x 14 degrees far field pattern of the diode. Output power of 550 mW at 1.8 A is thus obtained, with or without FBG stabilization, with maximum output power above 700mW. Thanks to the lasers' length, voltage at this current level is below 1.9 V, which gives a reduced thermal load. Thus, the overall modules electrical consumption remains lower than 10 W at case temperatures ranging from 0 degrees C to 75 degrees C. The 3 mm length also guaranties high reliability of these laser diodes.

引用

页数：9

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