Indium droplet formation during molecular beam epitaxy of InGaN

被引：18
作者：
Chaly, VP
Borisov, BA
Demidov, DM
Krasovitsky, DM
Pogorelsky, YV
Shkurko, AP
Sokolov, IA
Karpov, SY
机构：
[1] ATC Semicond Devices Ltd, St Petersburg 194156, Russia
[2] Soft Impact Ltd, St Petersburg 194156, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 1-2期
关键词：
MBE; InGaN; droplet formation; surface segregation;
D O I：
10.1016/S0022-0248(99)00298-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III-V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：147 / 149
页数：3
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