Indium droplet formation during molecular beam epitaxy of InGaN

被引：18

作者：

Chaly, VP

Borisov, BA

Demidov, DM

Krasovitsky, DM

Pogorelsky, YV

Shkurko, AP

Sokolov, IA

Karpov, SY

机构：

[1] ATC Semicond Devices Ltd, St Petersburg 194156, Russia

[2] Soft Impact Ltd, St Petersburg 194156, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 1-2期

关键词：

MBE; InGaN; droplet formation; surface segregation;

D O I：

10.1016/S0022-0248(99)00298-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III-V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：147 / 149

页数：3

共 8 条

[1] Growth and applications of Group III nitrides
Ambacher, O
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) : 2653 - 2710
[2] AVERYANOVA MV, 1996, MRS J NITRIDE SEMICO, V1
[3] Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
Doppalapudi, D
Basu, SN
Ludwig, KF
Moustakas, TD
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1389 - 1395
[4] Real time control of InxGa1-xN molecular beam epitaxy growth
Grandjean, N
Massies, J
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1078 - 1080
[5] Gurvich L.V., 1989, Thermodynamic Properties of Individual Substances
[6] In situ control of GaN growth by molecular beam epitaxy
Held, R
Crawford, DE
Johnston, AM
Dabiran, AM
Cohen, PI
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 272 - 280
[7] Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
Mesrine, M
Grandjean, N
Massies, J
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (03) : 350 - 352
[8] MBE growth of (In)GaN for led applications
Riechert, H
Averbeck, R
Graber, A
Schienle, M
Strauss, U
Tews, H
[J]. III-V NITRIDES, 1997, 449 : 149 - 159

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