Optical properties of AlxGa1-xAsySb1-y epitaxial layers

被引：0

作者：

Swiatek, K ^{[1
]}

Piskorski, M ^{[1
]}

Piotrowski, TT ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND

来源：

ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

引用

页码：1100 / 1102

页数：3

共 5 条

[1] PHOTOLUMINESCENCE STUDIES ON GAXIN1-XSB ALLOYS [J].