Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

被引：16

作者：

Lin, A. ^{[1
,2
]}

Liang, B. L. ^{[1
,2
]}

Dorogan, V. G. ^{[3
]}

Mazur, Yu I. ^{[3
]}

Tarasov, G. G. ^{[4
]}

Salamo, G. J. ^{[3
]}

Huffaker, D. L. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[3] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[4] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 07期

关键词：

OPTICAL-PROPERTIES; GAAS-SURFACES; PHOTOLUMINESCENCE; WELLS; SPECTROSCOPY; ENHANCEMENT; TRANSISTOR; GAAS(100); ISLANDS; DENSITY;

D O I：

10.1088/0957-4484/24/7/075701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on an InAs quantum dot (QD) hybrid structure with a top surface QD layer coupled to two buried QD layers that is highly sensitive to surface passivation. After 180 min of passivation, the photoluminescence (PL) peak of the surface QDs shifts from 1545 to 1275 nm while its intensity decreases by one order of magnitude. Time-resolved PL reveals a significant decrease of carrier tunneling between the QD layers because of the surface state modification by chemical treatment. A simple model with rate equations is used to explain the observed optical performance. Our results show that the optical performance of this hybrid structure is very sensitive to the surface environment, making it a potential candidate for sensing applications.

引用

页数：6

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