First Demonstration of W-Band Tri-gate GaN-HEMT Power Amplifier MMIC With 30 dBm Output Power

被引：0

作者：

Ture, E. ^{[1
]}

Brueckner, P. ^{[1
]}

Alsharef, M. ^{[2
]}

Granzner, R. ^{[2
]}

Schwierz, F. ^{[2
]}

Quay, R. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Ilmenau Univ Technol, Inst Microelect & Nanoelect, D-98684 Ilmenau, Germany

来源：

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年

关键词：

Gallium nitride; high-electron-mobility transistor (HEMT); power amplifiers; Tri-gate; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device-and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Tri-gate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range of 86-94 GHz with 8% of power-added-efficiency (PAE) and more than 12 dB of transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards highperformance millimeter-wave PA designs.

引用

页码：35 / 37

页数：3

共 4 条

[1] Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT [J].

Lee, Dong Seup ;

Wang, Han ;

Hsu, Allen ;

Azize, Mohamed ;

Laboutin, Oleg ;

Cao, Yu ;

Johnson, Jerry Wayne ;

Beam, Edward ;

Ketterson, Andrew ;

Schuette, Michael L. ;

Saunier, Paul ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) :969-971

[2]

Margomenos A., 2014, P IEEE COMP SEM IC S

[3] High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers [J].

Ture, Erdin ;

Brueckner, Peter ;

Godejohann, Birte-Julia ;

Aidam, Rolf ;

Alsharef, Mohamed ;

Granzner, Ralf ;

Schwierz, Frank ;

Quay, Ruediger ;

Ambacher, Oliver .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (01) :1-6

[4] W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology [J].

Wu Shaobing ;

Gao Jianfeng ;

Wang Weibo ;

Zhang Junyun .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (10) :3882-3886

← 1 →