Nonlinear optical transmittance of semiconductors in the presence of high-intensity radiation fields

被引：0
|
作者：
Dong, H. M. [1 ]
Han, F. W. [2 ]
Duan, Y. F. [1 ]
Huang, F. [3 ,4 ]
Liu, J. L. [4 ]
机构：
[1] China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Peoples R China
[2] Jining Med Univ, Sch Med Informat Engn, Jining 272067, Peoples R China
[3] China Univ Min & Technol, Low Carbon Energy Inst, Xuzhou 221116, Peoples R China
[4] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 16期
基金：
中国国家自然科学基金;
关键词：
2-PHOTON ABSORPTION; ELECTROABSORPTION;
D O I：
10.1063/1.5021280
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We developed a systematic theoretical study of nonlinear optical properties of semiconductors. The eight-band k.p model and the energy-balance equation are employed to calculate the transmission and optical absorption coefficients in the presence of both the linear one-photon absorption and the nonlinear two-photon absorption (TPA) processes. A substantial reduction of the optical transmittance far below the band-gap can be observed under relatively high-intensity radiation fields due to the nonlinear TPA. The TPA-induced optical transmittance decreases with increasing intensity of the radiation fields. Our theoretical results are in line with those observed experimentally. The theoretical approach can be applied to understand the nonlinear optical properties of semiconductors under high-field conditions. Published by AIP Publishing.
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页数：7
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