An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances

被引：21

作者：

Burm, J

Schaff, WJ

Eastman, LF

Amano, H

Akasaki, I

机构：

[1] CORNELL UNIV,CORNELL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] MEIJO UNIV,DEPT ELECT & ELECT ENGN,NAGOYA,AICHI,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 05期

基金：

日本学术振兴会;

关键词：

D O I：

10.1109/16.568058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A small-signal equivalent circuit model of III-V nitride MODFET's is presented. The metal-semiconductor ohmic contacts were modeled as a transmission line, as parasitic Z-elements cannot be modeled as a simple resistor/inductor discrete circuit due to high contact resistances, The model describes the highly resistive contacts with a good accuracy.

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收藏

页码：906 / 907

页数：2

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