Demonstration of the spin solar cell and spin photodiode effect

被引:79
作者
Endres, B. [1 ]
Ciorga, M. [1 ]
Schmid, M. [1 ]
Utz, M. [1 ]
Bougeard, D. [1 ]
Weiss, D. [1 ]
Bayreuther, G. [1 ]
Back, C. H. [1 ]
机构
[1] Univ Regensburg, Inst Expt & Angew Phys, D-93053 Regensburg, Germany
关键词
P-N-JUNCTIONS; INJECTION; SEMICONDUCTORS; FERROMAGNET; TRANSPORT; SILICON;
D O I
10.1038/ncomms3068
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Spin injection and extraction are at the core of semiconductor spintronics. Electrical injection is one method of choice for the creation of a sizeable spin polarization in a semiconductor, requiring especially tailored tunnel or Schottky barriers. Alternatively, optical orientation can be used to generate spins in semiconductors with significant spin-orbit interaction, if optical selection rules are obeyed, typically by using circularly polarized light at a well-defined wavelength. Here we introduce a novel concept for spin injection/extraction that combines the principle of a solar cell with the creation of spin accumulation. We demonstrate that efficient optical spin injection can be achieved with unpolarized light by illuminating a p-n junction where the p-type region consists of a ferromagnet. The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge.
引用
收藏
页码:1 / 5
页数:5
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