Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures

被引：79

作者：

Li, X. Y. ^{[1
]}

Li, D. ^{[1
]}

Xin, H. X. ^{[1
]}

Zhang, J. ^{[1
]}

Song, C. J. ^{[1
]}

Qin, X. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 561卷

关键词：

Intermetallics; Solid state reactions; Thermoelectric; X-ray diffraction;

D O I：

10.1016/j.jallcom.2013.01.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermoelectric properties of the bismuth doped compounds Cu3Sb1-xBixSe4, prepared by melting method and spark plasma sintering (SPS) technique, were investigated in the temperature range from 300 K to 600 K. The results indicate that the electrical resistivity of the Bi-doped compounds decreased as compare to Cu3SbSe4 due to the increase in the hole concentration; also thermal conductivity lowered after doping, which can be attributed to the strong phonons scattering by atom mass fluctuations. Moreover, it is found that the state of density effective mass m* increases for the doped compounds, which could be responsible for the enhanced thermopower at T > similar to 400 K. The largest ZT(max) = 0.7 is achieved at 600 K for Cu3Sb0.98Se0.02, which is about 3.3 times larger than that of the un-doped compounds. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：105 / 108

页数：4

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