LOW TEMPERATURE EPITAXY OF SI AND SIGE USING DISILANE-BASED CHEMISTRY FOR ELECTRONIC PURPOSES

被引：7
作者：
Damlencourt, J. F. [1 ]
机构：
[1] CEA, LETI, Minatec, F-38054 Grenoble, France
来源：
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2010年 / 28卷 / 01期
关键词：
D O I：
10.1149/1.3375620
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The low temperature epitaxy of Si and SiGe has been investigated with a disilane-based precursor. The evolution of the Si growth rate with the temperature shows some specificity: the growth rate is independent of the growth temperature between 700 degrees C and 600 degrees C and remains very high at low temperature (below 500 degrees C). Concerning the SiGe growth, the deposition rate is higher than obtained with silane. The Ge-incorporation seems to be independent of the growth temperature. This leads to a major advantage for the wafer uniformity and especially for wafer sizes up to 300 mm.
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页码：343 / 348
页数：6
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