Solar cells parameters evaluation from dark I-V characteristics

被引：38

作者：

Bouzidi, K. ^{[1
]}

Chegaar, M. ^{[1
]}

Aillerie, M.

机构：

[1] Ferhat Abbas Univ, Fac Sci, Dept Phys, Setif 19000, Algeria

来源：

TERRAGREEN 2012: CLEAN ENERGY SOLUTIONS FOR SUSTAINABLE ENVIRONMENT (CESSE) | 2012年 / 18卷

关键词：

Extraction; silicon solar cell; series and shunt resistances; dark I-V characteristics; CURRENT-VOLTAGE CHARACTERISTICS; HIGH SERIES RESISTANCE; SCHOTTKY DIODES; EXTRACTION; MODEL; PLOT;

D O I：

10.1016/j.egypro.2012.06.001

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, a comparative analysis of three methods to determine the four solar cells parameters (the saturation current (Is), the series resistance (Rs), the ideality factor (n), and the shunt conductance (Gsh)) of the single diode lumped model from its dark curve is presented. These methods are based on Gromov, Werner, and Mikhelashviliet al. methods that were used to extract the Schottky diode parameters. These techniques have been adequately modi ed, extended to cover the case of solar cells and used to extract the parameters of interest from experimental I-V characteristic of a Poly-Si solar cell under dark condition. (C) 2010 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of The TerraGreen Society.

引用

页码：1601 / 1610

页数：10

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