A general procedure for extraction of bias dependent dynamic self heating model parameters

被引：3

作者：

Andersson, K ^{[1
]}

Fager, C ^{[1
]}

Pedro, JC ^{[1
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, S-41296 Gothenburg, Sweden

来源：

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年

关键词：

electrothermal effects; semiconductor device modeling;

D O I：

10.1109/MWSYM.2005.1516881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general method for characterizing electrothermal interaction due to self heating is proposed. The characterization is performed using only electrical measurements and is directly applicable to a wide range or device technologies. A rigorous small-signal analysis of the electrothermal problem forms the basis for the characterization and model parameter extraction technique. The preposed technique allows for extraction of both the thermal impedance and the thermal coefficient. The small-signal analysis is valid for any N-port subject to self-heating from a single heat source. The method is demonstrated on a 200 pm pHEMT device.

引用

页码：1159 / 1162

页数：4

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