Thermal stability of germanium-tin (GeSn) fins

被引：10

作者：

Lei, Dian ^{[1
]}

Lee, Kwang Hong ^{[2
]}

Bao, Shuyu ^{[2
,3
]}

Wang, Wei ^{[1
]}

Masudy-Panah, Saeid ^{[1
]}

Tan, Chuan Seng ^{[2
,3
]}

Tok, Eng Soon ^{[4
]}

Gong, Xiao ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] SMART, LEES, 1 CREATE Way,10-01 CREATE Tower, Singapore 138602, Singapore

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

[4] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 25期

基金：

新加坡国家研究基金会;

关键词：

SEGREGATION; HYDROGEN; MOSFETS; SILICON; GROWTH; ATOMS; LAYER;

D O I：

10.1063/1.5006994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the thermal stability of germanium-tin (Ge1-xSnx) fins under rapid thermal annealing in N-2 ambient. The Ge1-xSnx fins were formed on a GeSn-on-insulator substrate and were found to be less thermally stable than blanket Ge1-xSnx films. The morphology change and material quality of the annealed Ge1-xSnx fin are investigated using scanning electron microscopy, Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. Obvious degradation of crystalline quality of the Ge0.96Sn0.04 fin was observed, and a thin Ge layer was formed on the SiO2 surface near the Ge0.96Sn0.04 fin region after 500 degrees C anneal. A model was proposed to explain the morphology change of the Ge0.96Sn0.04 fin. Published by AIP Publishing.

引用

页数：5

共 36 条

[1] Anisotropic capillary instability of silicon nanostructures under hydrogen anneal
Barwicz, T.
Cohen, G. M.
Reuter, K. B.
Bangsaruntip, S.
Sleight, J. W.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (09)
[2] Thermal stability and optical properties of Si-Ge nanoparticles
Bonham, Brandon
Guisbiers, Gregory
[J]. NANOTECHNOLOGY, 2017, 28 (24)
[3] Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Chen, Robert
Huang, Yi-Chiau
Gupta, Suyog
Lin, Angie C.
Sanchez, Errol
Kim, Yihwan
Saraswat, Krishna C.
Kamins, Theodore I.
Harris, James S.
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 365 : 29 - 34
[4] Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Dong, Yuan
Wang, Wei
Xu, Shengqiang
Lei, Dian
Gong, Xiao
Guo, Xin
Wang, Hong
Lee, Shuh-Ying
Loke, Wan-Khai
Yoon, Soon-Fatt
Yeo, Yee-Chia
[J]. OPTICS EXPRESS, 2017, 25 (14): : 15818 - 15827
[5] Hydrogen annealing of arrays of planar and vertically stacked Si nanowires
Dornel, E.
Ernst, T.
Barbe, J. C.
Hartmann, J. M.
Delaye, V.
Aussenac, F.
Vizioz, C.
Borel, S.
Maffini-Alvaro, V.
Isheden, C.
Foucher, J.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (23)
[6] Frank W., 1984, DIFFUSION CRYSTALLIN, P63
[7] Genquan Han, 2012, 2012 IEEE Symposium on VLSI Technology, P97, DOI 10.1109/VLSIT.2012.6242479
[8] Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 °C Si2H6 Passivation
Gong, Xiao
Han, Genquan
Bai, Fan
Su, Shaojian
Guo, Pengfei
Yang, Yue
Cheng, Ran
Zhang, Dongliang
Zhang, Guangze
Xue, Chunlai
Cheng, Buwen
Pan, Jisheng
Zhang, Zheng
Tok, Eng Soon
Antoniadis, Dimitri
Yeo, Yee-Chia
[J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) : 339 - 341
[9] Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
Guo, Pengfei
Han, Genquan
Gong, Xiao
Liu, Bin
Yang, Yue
Wang, Wei
Zhou, Qian
Pan, Jisheng
Zhang, Zheng
Tok, Eng Soon
Yeo, Yee-Chia
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (04)
[10] New materials for post-Si computing: Ge and GeSn devices
Gupta, Suyog
Gong, Xiao
Zhang, Rui
Yeo, Yee-Chia
Takagi, Shinichi
Saraswat, Krishna C.
[J]. MRS BULLETIN, 2014, 39 (08) : 678 - 686

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