Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

被引：19

作者：

Sommet, R. ^{[1
]}

Mouginot, G. ^{[2
]}

Quere, R. ^{[1
]}

Ouarch, Z. ^{[2
]}

Camiade, M. ^{[2
]}

机构：

[1] Univ Limoges, XLIM, F-19100 Brive La Gaillarde, France

[2] UMS, F-91401 Orsay, France

来源：

MICROELECTRONICS JOURNAL | 2012年 / 43卷 / 09期

关键词：

Pulsed measurements; 3D finite element simulation; Trapping effects; Thermal boundary resistance; Liquid crystal thermal measurements; TEMPERATURE; GAN;

D O I：

10.1016/j.mejo.2011.07.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper an analysis of thermal behavior of microwave power AlGaN/GaN HEMTs has been carried out through pulsed current-voltage (PIV) measurements and small signal [S] parameters. A special care about trapping effects has been followed where it is shown that the thermal resistance of the device can be accurately determined provided that some assumptions on the trapping behavior of the device are verified. The values obtained have been checked by three dimensional finite element (3D-FE) simulations. Finally, the thermal boundary resistance (TBR) between GaN/SiC has been extracted and compared to literature. The results we have obtained are in line with what can be found. In addition to this first set of results, a second 3D-FE analysis of a larger transistor has been performed and checked thanks to liquid crystal measurements. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：611 / 617

页数：7

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