Large-sized beta-Si3N4 crystals up to 10 mm in length and 0.3 mm in diameter with low impurity concentration are successfully grown from silicon melt in a nitrogen atmosphere, By controlling the concentration of impurities in the silicon melt, a new kind of beta-Si3N4 crystal, that is, a transparent coloring one with an absorption edge around a wavelength of 520 nm, is obtained.
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页码:1690 / 1691
页数:2
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BISWAS SK, 1984, HIGH TEMP HIGH PRESS, V12, P81