Reflection of Plane Waves in a Semiconducting Medium under Photothermal Theory

被引：63

作者：

Song, Y. Q. ^{[1
,2
,3
,4
]}

Bai, J. T. ^{[2
,3
]}

Ren, Z. Y. ^{[2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Strength & Vibrat Mech Struct, Sch Aerosp, Xian 710049, Shaanxi, Peoples R China

[2] NW Univ Xian, Natl Key Lab Photoelect Technol & Funct Mat, Culture Base, Xian 710069, Shaanxi, Peoples R China

[3] NW Univ Xian, Shaanxi Prov Key Lab Photoelect Technol, Xian 710069, Shaanxi, Peoples R China

[4] Dalian Univ Technol, State Key Lab Struct Anal Ind Equipment, Dalian 116023, Peoples R China

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 2012年 / 33卷 / 07期

关键词：

Coupling; Photothermal; Plasma wave; Reflection; Thermoelastic wave; HYDROSTATIC INITIAL STRESS; ELASTIC HALF-SPACE; ENERGY-DISSIPATION; THERMOVISCOELASTIC WAVES; FREQUENCY; PROPAGATION; REFRACTION; INTERFACE;

D O I：

10.1007/s10765-012-1239-4

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In this paper photothermal theory was used to study the reflection of waves at the surface of a semi-infinite semiconconducting medium. Using the harmonic wave method, the reflection coefficient ratios were obtained analytically under coupled thermoelastic theory and plasma theory for an incident CI wave, which is one coupled thermoelastic plasma wave and an incident rotational wave. The variations of the amplitude of reflection coefficient ratios with the angle of incidence are shown graphically for silicon. Effects of the thermal frequency, the thermoelastic coupling parameter, and the thermoelectric coupling parameter were given by numerical results. Also, the energy ratios for reflected waves were computed to check the numerical results.

引用

页码：1270 / 1287

页数：18

共 26 条

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