Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

被引：0

作者：

Goux, L. ^{[1
]}

Belmonte, A. ^{[1
,2
]}

Celano, U. ^{[1
,2
]}

Woo, J. ^{[1
]}

Folkersma, S. ^{[1
]}

Chen, C. Y. ^{[1
,2
]}

Redolfi, A. ^{[1
]}

Fantini, A. ^{[1
]}

Degraeve, R. ^{[1
]}

Clima, S. ^{[1
]}

Vandervorst, W. ^{[1
,2
]}

Jurczak, M. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Leuven, Belgium

来源：

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We optimize a novel W\WO3\Al2O3\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

引用

页数：2

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