Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

被引：37

作者：

Latu-Romain, Laurence ^{[1
]}

Mouchet, Celine ^{[1
]}

Cayron, Cyril ^{[2
]}

Rouviere, Emmanuelle ^{[1
]}

Simonato, Jean-Pierre ^{[1
]}

机构：

[1] CEA, LITEN DTNM LCH, F-38054 Grenoble 9, France

[2] CEA, LITEN DTH Grenoble Electron Microscopy Minatec, F-38054 Grenoble 9, France

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2008年 / 10卷 / 08期

关键词：

silicon nanowires; growth parameters; gas precursor; shape control; synthesis; surrounding environment;

D O I：

10.1007/s11051-007-9350-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.

引用

收藏

页码：1287 / 1291

页数：5

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