An Accurate FDTD Model for Crosstalk Analysis of CMOS-Gate-Driven Coupled RLC Interconnects (vol 56, pg 1185, 2014)

被引：0
|
作者：
Kumar, Vobulapuram Ramesh [1 ]
Kaushik, Brajesh Kumar [1 ]
Patnaik, Amalendu [1 ]
机构：
[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee 247667, Uttarakhand, India
来源：
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2015年 / 57卷 / 06期
关键词：
D O I：
10.1109/TEMC.2015.2447516
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1756 / 1756
页数：1
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