Reliability study of carbon-doped GST stack robust against Pb-free soldering reflow

被引：0

作者：

Souiki, S. ^{[1
,2
]}

Hubert, Q. ^{[1
,2
]}

Navarro, G. ^{[1
]}

Persico, A. ^{[1
]}

Jahan, C. ^{[1
]}

Henaff, E. ^{[1
]}

Delaye, V. ^{[1
]}

Blachier, D. ^{[1
]}

Sousa, V. ^{[1
]}

Perniola, L. ^{[1
]}

Vianello, E.

De Salvo, B. ^{[1
]}

机构：

[1] CEA LETI Minatec, 17 Rue Martyrs, F-38054 Grenoble, France

[2] IMEP LAHC, F-38016 Grenoble 1, France

来源：

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年

关键词：

reliability; phase change memory; Carbon-doped GST; soldering issue;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigate the performances of carbon-doped Ge2Sb2Te5 films (named hereafter GST) which have been integrated together with a thin titanium capping layer into Phase-Change Memory devices. We show that the carbon content into GST and the titanium cap layer thickness can be optimized to obtain an Amorphous As-Deposited (AAD) phase which is stable under both the typical Back End-Of-Line (BEOL) thermal budget ( 2 min at 400 degrees C) and standard Pb-free soldering reflow process conditions (temperature peak at 260 degrees C). Therefore, the material obtained at fab-out keeps its disordered phase and can be used to pre-code one state of information stable against the standard soldering reflow ( peak at 260 C). We propose to use this high resistance state together with an electrically induced low resistance state to pre-code the memory prior to PCB manufacturing.

引用

页数：5

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