Circuit-level optimisation of a:Si TFT-based AMOLED pixel circuits for maximum hold current

被引：1

作者：

Foroughi, Aidin ^{[1
]}

Mehrpoo, Mohammadreza ^{[1
]}

Ashtiani, Shahin J. ^{[1
]}

机构：

[1] Univ Tehran, Coll Engn, Sch Elect & Comp Engn, Tehran, Iran

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2013年 / 100卷 / 11期

关键词：

active matrix OLED; pixel circuit; amorphous silicon TFT; circuit optimisation; flat panel displays; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; OLED TECHNOLOGY; A-SI; DISPLAYS; DEVICES;

D O I：

10.1080/00207217.2012.751318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design of AMOLED pixel circuits has manifold constraints and trade-offs which provides incentive for circuit designers to seek optimal solutions for different objectives. In this article, we present a discussion on the viability of an optimal solution to achieve the maximum hold current. A compact formula for component sizing in a conventional 2T1C pixel is, therefore, derived. Compared to SPICE simulation results, for several pixel sizes, our predicted optimum sizing yields maximum currents with errors less than 0.4%.

引用

页码：1483 / 1498

页数：16