Analysis of germanium-doped silicon vertical PN junction optical phase shifter

被引：7

作者：

Mishra, Darpan ^{[1
]}

Sonkar, Ramesh Kumar ^{[1
]}

机构：

[1] Indian Inst Technol Guwahati, Dept Elect & Elect Engn, Gauhati 781039, Assam, India

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2019年 / 36卷 / 05期

关键词：

MACH-ZEHNDER MODULATOR; MOBILITY; MODEL;

D O I：

10.1364/JOSAB.36.001348

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the performance of a germanium-doped silicon optical phase shifter with vertical PN junction has been investigated. The proposed phase shifter is simulated using a process simulation tool, and 2D carrier distribution has been used to calculate the phase shifter performance metrics. The designed phase shifter is integrated into a Mach-Zehnder interferometer structure, and the transfer characteristics are plotted. The proposed phase shifter has a phase shift of similar to 141 degrees/mm, V pi L pi of similar to 0.64 V.cm, insertion loss of similar to 1.23 dB, and 3 dB bandwidth of similar to 37 GHz at 5 V reverse bias. (C) 2019 Optical Society of America

引用

页码：1348 / 1354

页数：7

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