Lock-in Thermography-Based Local Efficiency Analysis of Solar Cells

被引:0
作者
Breitenstein, Otwin [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源
ISTFA 2012: CONFERENCE PROCEEDINGS FROM THE 38TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2012年
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic properties of solar cells, particularly multicrystalline silicon-based ones, are distributed spatially inhomogeneous, where regions of poor quality may degrade the performance of the whole cell. These inhomogeneities mostly affect the dark current-voltage (I-V) characteristic, which decisively affects the efficiency. Since the grid distributes the local voltage homogeneously across the cell and leads to lateral balancing currents, local light beam-induced current methods alone cannot be used to image local cell efficiency parameters. Lock-in thermography (LIT) is the method of choice for imaging inhomogeneities of the dark I-V characteristic. This contribution introduces a novel method for evaluating a number of LIT images taken at different applied biases. By pixel-wise fitting the data to a two diode model and taking into account local series resistance and short circuit current density data, realistically simulated images of the other cell efficiency parameters (open circuit voltage, fill factor, and efficiency) are obtained. Moreover, simulated local and global dark and illuminated I-V characteristics are obtained, also for various illumination intensities. These local efficiency data are expectation values, which would hold if a homogeneous solar cell had the properties of the selected region of the inhomogeneous cell. Alternatively, also local efficiency data holding for the cell working at its own maximum power point may be generated. The amount of degradation of different cell efficiency parameters in some local defect positions is an indication how dangerous these defects are for degrading this parameter of the whole cell. The method allows to virtually 'cut out' certain defects for checking their influence on the global characteristics. Thus, by applying this method, a detailed local efficiency analysis of locally inhomogeneous solar cells is possible. It can be reliably predicted how a cell would improve if certain defects could be avoided. This method is implemented in a software code, which is available.
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页码:250 / 254
页数:5
相关论文
共 11 条
[1]  
[Anonymous], 2010, Lock-in thermography : basics and use for evaluating electronic devices and materials. 2nd ed, Springer series in advanced microelectronics
[2]  
Boostandoost M, 2011, ISTFA 2011: CONFERENCE PROCEEDINGS FROM THE 37TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, P330
[3]  
BREITENSTEIN O, 2009, P ISTFA 2009 SAN JOS, P162
[4]   Local efficiency analysis of solar cells based on lock-in thermography [J].
Breitenstein, Otwin .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 107 :381-389
[5]   Nondestructive local analysis of current-voltage characteristics of solar cells by lock-in thermography [J].
Breitenstein, Otwin .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (10) :2933-2936
[6]   Fast series resistance imaging for silicon solar cells using electroluminescence [J].
Haunschild, Jonas ;
Glatthaar, Markus ;
Kasemann, Martin ;
Rein, Stefan ;
Weber, Eicke R. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (7-8) :227-229
[7]   Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography [J].
Ramspeck, K. ;
Bothe, K. ;
Hinken, D. ;
Fischer, B. ;
Schmidt, J. ;
Brendel, R. .
APPLIED PHYSICS LETTERS, 2007, 90 (15)
[8]   DEPARTURES FROM THE PRINCIPLE OF SUPERPOSITION IN SILICON SOLAR-CELLS [J].
ROBINSON, SJ ;
ABERLE, AG ;
GREEN, MA .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :7920-7930
[9]   Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation [J].
Steingrube, Silke ;
Breitenstein, Otwin ;
Ramspeck, Klaus ;
Glunz, Stefan ;
Schenk, Andreas ;
Altermatt, Pietro P. .
JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
[10]  
Sze S.M., 2007, Physics of Semiconductor Devices, P90