The relationship of the magnetic properties of M (M = Mn, Fe, Co)-doped ZnO single crystals and their electronic structures

被引:23
作者
Tamura, T. [1 ]
Ozaki, H. [1 ]
机构
[1] Waseda Univ, Shinjuku Ku, Tokyo 1698555, Japan
关键词
DOPED ZNO; VAPOR TRANSPORT; THIN-FILMS; GROWTH; SEMICONDUCTORS; FERROMAGNETISM;
D O I
10.1088/0953-8984/21/2/026009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic density of states and magnetic properties were investigated by tunneling spectroscopy and SQUID, respectively, for a series of 3d transition-metal (Mn, Fe, Co)-doped ZnO. By tunneling spectroscopy an additional density of states was observed in Mn- and Co-doped ZnO adjacent to the top of the valence band of the host ZnO. Instead, in the Fe-doped sample, a band of density of states was observed across the Fermi level in the mid-gap. The magnetization curve (M versus H) obtained by SQUID showed a ferromagnetic hysteresis at room temperature for the Fe-doped sample, whereas for the Mn- and Co-doped samples, the M versus H curve showed only a linear characteristic without hysteresis. From the comparison of the density of states and the magnetization characteristics, it is strongly suggested that the ferromagnetism in Fe-doped ZnO at room temperature originates from the half-filled Fe 3d band in the mid-gap of the host ZnO.
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页数:5
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