A High-Temperature-Capacitor Dielectric Based on K0.5Na0.5NbO3-Modified Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3

被引:119
作者
Dittmer, Robert [1 ]
Anton, Eva-Maria [1 ]
Jo, Wook [1 ]
Simons, Hugh [2 ]
Daniels, John E. [2 ]
Hoffman, Mark [2 ]
Pokorny, Jan [3 ,4 ]
Reaney, Ian M. [3 ]
Roedel, Juergen [1 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Hesse, Germany
[2] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S10 2TN, S Yorkshire, England
[4] Acad Sci Czech Republ, Inst Phys, Prague 18221, Czech Republic
基金
英国工程与自然科学研究理事会;
关键词
LEAD-ZIRCONATE-TITANATE; RAMAN-SPECTROSCOPY; LANTHANUM; RESISTANCE; CERAMICS; FIELD; BIAS;
D O I
10.1111/j.1551-2916.2012.05321.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A high-temperature dielectric, (1x)(0.6Bi(1/2)Na(1/2)TiO(3)0.4Bi(1/2)K(1/2)TiO(3))xK(0.5)Na(0.5)NbO(3), off the morphotropic phase boundary of the parent matrix 0.8Bi(1/2)Na(1/2)TiO(3)0.2Bi(1/2)K(1/2)TiO(3), has been developed for application as a high-temperature capacitor. In addition to temperature-dependent permittivity and dielectric loss, DC conductivity and field-dependent permittivity are reported. These properties are correlated with temperature-dependent structure data measured at different length scales using Raman spectroscopy and neutron diffraction. It is suggested that all materials investigated are ergodic relaxors with two types of polar nanoregions providing different relaxation mechanisms. The most attractive properties for application as high-temperature dielectrics are obtained in a material with x,=,0.15 at less than 10% variation of relative permittivity of about 2100 between 54 degrees C and 400 degrees C.
引用
收藏
页码:3519 / 3524
页数:6
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