Influence of Oxygen on the Chemical Structure of Plasma Polymer Films Deposited from a Mixture of Tetravinylsilane and Oxygen Gas

被引：15

作者：

Cech, Vladimir ^{[1
]}

Studynka, Jan ^{[1
]}

Janos, Filip ^{[1
]}

Perina, Vratislav ^{[2
]}

机构：

[1] Brno Univ Technol, Inst Mat Chem, CZ-61200 Brno, Czech Republic

[2] Acad Sci Czech Republic, Inst Nucl Phys, CZ-25068 Rez, Czech Republic

来源：

PLASMA PROCESSES AND POLYMERS | 2007年 / 4卷

关键词：

FT-IR; mass spectroscopy; organosilicon precursors; plasma polymerization; Rutherford backscattering spectrometry (RBS);

D O I：

10.1002/ppap.200731903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tetravinylsilane was used to deposit hydrogenated amorphous silicon carbide (a-SiC:H) films with vinyl groups as functional species using an RF (13.56 MHz) pulsed plasma. Oxygen gas was mixed in tetravinylsilane to improve the compatibility of a-SiOC:H thin films with the silicon dioxide component. The oxygen-to-total-flow rate ratio and effective power were the only variable deposition parameters. The deposited films were analyzed by Rutherford backscattering spectrometry, elastic recoil detection analysis, and infrared spectroscopy to determine the elemental composition and chemical structure of the plasma polymer. The chemical structure of the films was correlated with plasma species monitored by mass spectroscopy during the deposition process. The results clarified changes in the chemical structure of the films under the influence of oxygen.

引用

页码：S776 / S780

页数：5

共 9 条

[1] Physico-chemical properties of plasma-polymerized tetravinylsilane [J].