Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration

A technique of fabricating metallic thin wires by utilizing effective collection of the atoms caused by electromigration, which is a phenomenon of atomic diffusion due to high current density, is presented. Atoms diffused by electron flow can be used for making metallic thin wires. To form metallic thin wire at the intended position, we used passivated Al thin film line that had a slit at the anode end of the line as a test sample. As a result of current applying, the Al thin wire of a high aspect ratio was fabricated. (c) 2005 Elsevier B.V. All rights reserved.