Flexoelectric Effect in the Reversal of Self-Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films

被引：156

作者：

Jeon, Byung Chul ^{[2
,3
]}

Lee, Daesu ^{[2
,3
]}

Lee, Myang Hwan ^{[4
]}

Yang, Sang Mo ^{[2
,3
]}

Chae, Seung Chul ^{[2
,3
]}

Song, Tae Kwon ^{[4
]}

Bu, Sang Don ^{[1
]}

Chung, Jin-Seok ^{[5
]}

Yoon, Jong-Gul ^{[6
]}

Noh, Tae Won ^{[2
,3
]}

机构：

[1] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

[2] Inst for Basic Sci Korea, Ctr Funct Interfaces Correlated Electron Syst, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[4] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

[5] Soongsil Univ, Dept Phys, Seoul 156743, South Korea

[6] Univ Suwon, Dept Phys, Hwaseong 445743, South Korea

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 39期

基金：

新加坡国家研究基金会;

关键词：

DOMAIN CONTROL; STRESS;

D O I：

10.1002/adma.201301601

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

引用

页码：5643 / +

页数：8

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