Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

被引：38

作者：

Ma, Ming ^{[1
]}

Meyaard, David S. ^{[2
]}

Shan, Qifeng ^{[3
]}

Cho, Jaehee ^{[2
]}

Schubert, E. Fred ^{[2
]}

Kim, Gi Bum ^{[4
]}

Kim, Min-Ho ^{[4
]}

Sone, Cheolsoo ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[4] Samsung Elect, LED Business, Adv Dev Grp, Yongin 446920, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

COUPLED-WAVE ANALYSIS;

D O I：

10.1063/1.4744422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4744422]

引用

页数：4

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