Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

被引：38

作者：

Ma, Ming ^{[1
]}

Meyaard, David S. ^{[2
]}

Shan, Qifeng ^{[3
]}

Cho, Jaehee ^{[2
]}

Schubert, E. Fred ^{[2
]}

Kim, Gi Bum ^{[4
]}

Kim, Min-Ho ^{[4
]}

Sone, Cheolsoo ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[4] Samsung Elect, LED Business, Adv Dev Grp, Yongin 446920, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

COUPLED-WAVE ANALYSIS;

D O I：

10.1063/1.4744422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4744422]

引用

页数：4

共 15 条

[1] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS [J].

BURROUGHES, JH ;

BRADLEY, DDC ;

BROWN, AR ;

MARKS, RN ;

MACKAY, K ;

FRIEND, RH ;

BURN, PL ;

HOLMES, AB .

NATURE, 1990, 347 (6293) :539-541

[2]

Horiuchi N., 2010, NAT PHOTONICS, V4, P738, DOI [10.1038/nphoton.2010.244, DOI 10.1038/nphoton.2010.244, DOI 10.1038/NPHOTON.2010.244]

[3] Omni-directional reflectors for light-emitting diodes [J].

Kim, Jong Kyu ;

Xi, J. -Q. ;

Schubert, E. Fred .

LIGHT-EMITING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS X, 2006, 6134

[4] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[5] Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate [J].

Masui, H ;

Chakraborty, A ;

Haskell, BA ;

Mishra, UK ;

Speck, JS ;

Nakamura, S ;

DenBaars, SP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1329-L1332

[6]

Meyaard D. S., 2009, THESIS RENSSELAER PO

[7] RIGOROUS COUPLED-WAVE ANALYSIS OF PLANAR-GRATING DIFFRACTION [J].

MOHARAM, MG ;

GAYLORD, TK .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1981, 71 (07) :811-818

[8] FORMULATION FOR STABLE AND EFFICIENT IMPLEMENTATION OF THE RIGOROUS COUPLED-WAVE ANALYSIS OF BINARY GRATINGS [J].

MOHARAM, MG ;

GRANN, EB ;

POMMET, DA ;

GAYLORD, TK .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1995, 12 (05) :1068-1076

[9] Solid-state light sources getting smart [J].

Schubert, EF ;

Kim, JK .

SCIENCE, 2005, 308 (5726) :1274-1278

[10] Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates [J].

Schubert, Martin F. ;

Chhajed, Sameer ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Cho, Jaehee .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

← 1 2 →