Power-Gating Models for Rapid Design Exploration

被引:0
|
作者
Peterson, Dustin [1 ]
Bringmann, Oliver [1 ]
机构
[1] Eberhard Karls Univ Tubingen, Tubingen, Germany
来源
2019 17TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2019年
关键词
D O I
10.1109/newcas44328.2019.8961232
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Power gating (PG) is an effective method to reduce leakage currents in an SoC design during run-time. It dynamically shuts down components using a network of sleep transistors, but requires a detailed analysis to scale this network appropriately with respect to area, wake-up time, in-rush currents, voltage drops and transition energies. In this paper, we present a method to efficiently determine these key parameters for any SoC design and sleep transistor network at gate-level to enable the rapid exploration of power design alternatives while providing sufficient accuracy for high-level design exploration. Compared to SPICE our approach achieves a speed-up of up to 11457x for two ISCAS circuits, a 32-bit multiplier and a RISC-V core, each build for a 90nm PDK. The average error compared to SPICE is 2.6% for peak current and 10% for wake-up energy and delay.
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页数:4
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