A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

被引:7
作者
Jadli, Utkarsh [1 ,2 ]
Mohd-Yasin, Faisal [1 ,2 ]
Moghadam, Hamid Amini [1 ,2 ]
Nicholls, Jordan R. [1 ,2 ]
Pande, Peyush [1 ,2 ]
Dimitrijev, Sima [1 ,2 ]
机构
[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Brisbane, Qld 4111, Australia
[2] Griffith Univ, Sch Engn & Built Environm, Brisbane, Qld 4111, Australia
关键词
C-OSS losses; E-OSS; effective capacitance; energy stored; simple equation; switching losses; voltage-dependent parasitic capacitances;
D O I
10.1109/TPEL.2020.2993639
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The parasitic capacitances of semiconductor power devices that contribute to the switching losses are voltage dependent, which can make calculations of their stored energy difficult. Typically, manufacturers will provide effective capacitance values to aid in circuit design and component selection. However, stored energy calculations using these effective capacitor values are erroneous. In this letter, we derive a new equation for the stored energy in the voltage-dependent capacitance associated with a semiconductor depletion region, such as in diodes and transistors. In particular, we show that the 1/2 term in 1/2 CV2 should he replaced by a new term gamma, which depends on the device structure. By applying our proposed method to several commercial diodes and transistors, we show that it matches the measured data much better than using the effective capacitances. The proposed equation will enable better power circuit design by improving the accuracy of stored energy calculations.
引用
收藏
页码:12629 / 12632
页数:4
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