Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

被引：23

作者：

Iida, Daisuke ^{[1
,2
,3
]}

Fadil, Ahmed ^{[2
]}

Chen, Yuntian ^{[2
,4
]}

Ou, Yiyu ^{[2
]}

Kopylov, Oleksii ^{[2
]}

Iwaya, Motoaki ^{[3
]}

Takeuchi, Tetsuya ^{[3
]}

Kamiyama, Satoshi ^{[3
]}

Akasaki, Isamu ^{[3
,5
]}

Ou, Haiyan ^{[2
]}

机构：

[1] Tokyo Univ Sci, Dept Appl Chem, Tokyo 1258585, Japan

[2] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark

[3] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[4] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[5] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

AIP ADVANCES | 2015年 / 5卷 / 09期

基金：

日本学术振兴会; 中国国家自然科学基金;

关键词：

SPONTANEOUS EMISSION; LIGHT; RESONANCES; PLASMONS;

D O I：

10.1063/1.4931948

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm(2), and a factor of 8.1 at 1 W/cm(2). A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

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