Progress in MOVPE growth of crack-free AlGaN based bragg reflectors on Si(111)

被引：0

作者：

Charles, MB ^{[1
]}

Zhang, Y ^{[1
]}

Kappers, MJ ^{[1
]}

Humphreys, CJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期

关键词：

D O I：

10.1002/pssa.200565348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Having previously reported growth of uncracked AlN/GaN distributed Bragg reflectors (DBRs), this paper reports use of superlattices as a replacement for AIN layers to produce high quality crack free DBRs. In addition an InGaN LED structure grown above the DBR has been studied and showed improved uniformity in comparison with a standard LED structure. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1618 / 1621

页数：4

共 6 条

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[2]

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[3]

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[6]

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