(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

被引：16

作者：

Gislason, H ^{[1
]}

Sorensen, CB ^{[1
]}

Hvam, JM ^{[1
]}

机构：

[1] UNIV COPENHAGEN,NIELS BOHR INST,ORSTED LAB,DK-2100 COPENHAGEN O,DENMARK

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers. (C) 1996 American Institute of Physics.

引用

页码：800 / 802

页数：3

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