Development of silicon microheaters for chemoresistive gas sensors

被引:5
作者
Brida, S [1 ]
Ferrario, L [1 ]
Giacomozzi, F [1 ]
Giusti, D [1 ]
Guarnieri, V [1 ]
Margesin, B [1 ]
Pignatel, GU [1 ]
Soncini, G [1 ]
Vasiliev, A [1 ]
Verzellesi, G [1 ]
Zen, M [1 ]
机构
[1] IRST, ITC, I-38050 Trent, Italy
来源
DESIGN, TEST, AND MICROFABRICATION OF MEMS AND MOEMS, PTS 1 AND 2 | 1999年 / 3680卷
关键词
microheater; gas sensor; finite-element simulation;
D O I
10.1117/12.341164
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the design, fabrication, and characterisation of a microheater module for chemoresistive, metal-oxide semiconductor gas sensors, consisting of a dielectric stacked membrane, micromachined from bulk silicon and with an embedded polysilicon resistor heater. Fabricated structures exhibit excellent heating efficiency, requiring only 30 mW to achieve a temperature of 500 C. Measured electrothermal characteristics are in good agreement with the outcomes of 3D numerical simulations.
引用
收藏
页码:964 / 968
页数:5
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