First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

被引：22
作者：
Hur, Ji-Hyun [1 ,2 ]
机构：
[1] Sejong Univ, Dept Elect Engn, 209 Neungdong Ro, Seoul 05006, South Korea
[2] Hur Adv Res, 96 Dongtanbanseok Ro, Hwaseong Si 18456, Gyeonggi Do, South Korea
来源：
SCIENTIFIC REPORTS | 2020年 / 10卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
OXIDE;
D O I：
10.1038/s41598-020-62270-x
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Unlike experimental measurements that appeared to be quite large activation barriers, oxygen vacancies in zirconia-based resistive random access memory (ReRAM) are believed to migrate with a fairly low energy barrier, and this discrepancy has not been noticed nor seriously questioned up to date. In this paper, we work on this problem by means of first-principles calculations categorizing all the possible migration pathways by crystallographic directions. From the results, it is found that the low activation energy of oxygen vacancy that is expected from the switching characteristic of the device is originated from +2q charged oxygen vacancies in a nanometer-sized filament migrating into a particular crystallographic direction of monoclinic zirconia.
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页数：8
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