Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs

被引：6

作者：

Toriyama, Shuichi ^{[1
]}

Sano, Nobuyuki ^{[2
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 04期

关键词：

Schottky barrier MOSFET; Resonant tunneling; Direct tunneling; NEGF;

D O I：

10.1007/s10825-008-0220-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling dependence of electron transport in the double-gated Schottky barrier MOSFET (DG-SBT) below 10 nm is investigated in the framework of quantum transport theory, using non-equilibrium Green's function method. Simulation results show that the current-voltage characteristics in ultra-small DG-SBT are characterized by both resonant and direct tunneling effects. The electron potential in the 10-nm-scale DG-SBT surrounded by Schottky barriers acts as a resonant cavity and produce a negative differential resistance due to resonant tunneling effect. While, further scaling shallows the depth of the cavity and makes it difficult to form resonance levels. Hence, at the scaling limit, direct tunneling currents simply dominate the current-voltage characteristics of DG-SBT.

引用

页码：471 / 474

页数：4