Studies of a PT/PZT/PT sandwich structure for feram applications using sol-gel processing

被引：7
|
作者：
Ren, TL [1 ]
Zhang, LT [1 ]
Liu, LT [1 ]
Li, ZJ [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2001年 / 39卷 / 1-4期
关键词：
PZT; PT; sandwich structure; sol-gel; ferroelectric; fatigue;
D O I：
10.1080/10584580108011944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon-based PbTiO3/Pb(Zr,Ti)O-3/PbTiO3 (PT/PZT/PT) sandwich structure with Pt electrodes are prepared by a sol-gel method. Effects of the PT buffer layers to the phase formation of the PZT films are studies. Dielectric and ferroelectric properties of the sandwich structure are measured. Maximum dielectric constant of about 900 is obtained at the coercive field 20 kV/cm. The leakage current density is less than 5 x 10(-9) A/cm(2) below 200 kV/cm, which is much lower than that of PZT/PT structure. And there is almost no fatigue even after 5 x 10(9) read/write cycles for the PT/PZT/PT sandwich structure.
引用
收藏
页码：1165 / 1172
页数：8
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