High sensitivity extended gate effect transistor based on V2O5 nanorods

被引：22

作者：

Abd-Alghafour, N. M. ^{[1
,2
]}

Ahmed, Naser M. ^{[2
]}

Hassan, Z. ^{[2
]}

Almessiere, Munirah Abdullah ^{[3
]}

Bououdina, M. ^{[4
]}

Al-Hardan, Naif H. ^{[5
]}

机构：

[1] Iraqi Minist Educ, Anbar, Iraq

[2] Univ Sains Malaysia, Inst Nanooptoelect Res & Technol INOR, Usm Penang 11800, Malaysia

[3] Univ Dammam, Coll Sci, Dept Phys, Dammam, Saudi Arabia

[4] Univ Bahrain, Coll Sci, Dept Phys, POB 32038, Isa Town, Bahrain

[5] Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Phys, Bangi 43600, Malaysia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 02期

关键词：

FIELD-EFFECT TRANSISTOR; PH;

D O I：

10.1007/s10854-016-5669-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sensing characteristics of extended gate field effect transistor (EGFET) as pH sensor based on V2O5 nanorods (NRs) was fabricated for the first time. The as-deposited V2O5 NRs onto glass substrate by using spray pyrolysis method have a diameter of 140-160 nm and a length of 300-500 nm. The V2O5 NRs based EGFET pH sensor exhibited a remarkable pH sensing performance due to the larger effective sensing surface area. The sensing sensitivity and linearity of the pH-EGFET sensor was found to be 54.9 mV/pH and 0.9859, respectively in the range of pH 2-12. V2O5 NRs sensor showed superior pH sensing stability and reliability, thereby can be considered as potential candidate for mass fabrication in disposable biosensors.

引用

页码：1364 / 1369

页数：6

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