Non-Relief-Pattern Lithography Patterning of Solution Processed Organic Semiconductors

被引：31

作者：

Park, Sung Kyu ^{[1
,2
]}

Mourey, Devin A. ^{[3
,4
]}

Subramanian, Sankar ^{[5
]}

Anthony, John E. ^{[5
]}

Jackson, Thomas N. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Mat Sci Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Mat Sci Engn, Mat Res Inst, University Pk, PA 16802 USA

[5] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/adma.200801133

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Patterning of solution processed organic semiconductors demonstrated using a non-relief-pattern, photoresist-free, lithographic process with a self-assembled monolayer (SAM) patterned by deep ultraviolet (DUV) irradiation. The patterned, low-surface-energy SAM then steers the organic semiconductor solution into areas where the SAM has been removed by the DUV exposure resulting in organic semiconductor microstructures with good resolution.

引用

页码：4145 / +

页数：4

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