Sol-gel synthesis and characterization of Zn2SiO4:Mn phosphor films

被引：49

作者：

Lin, J

Sänger, DU

Mennig, M

Bärner, K

机构：

[1] Inst Neue Mat, D-66123 Saarbrucken, Germany

[2] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 64卷 / 02期

关键词：

phosphor film; sol-gel method; silicates;

D O I：

10.1016/S0921-5107(99)00155-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mn2+-doped Zn2SiO4 phosphor films were deposited on silicon and quartz glass substrates by sol-gel method (dip-coating). The variations of sol viscosity with time, him thickness with the number of layers were investigated in the Zn2SiO4:Mn system. The results of XRD and IR showed that the Zn2SiO4:Mn films remained amorphous below 700 degrees C and crystallized completely around 1000 degrees C. From AFM studies, it was observed that the grains of 0.5-0.8 mu m in size packed closely in Zn2SiO4:Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4:Mn films were characterized by absorption, excitation and emission spectra, as well as luminescence decay. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：73 / 78

页数：6