Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

被引：136

作者：

Ludewig, P. ^{[1
,2
]}

Knaub, N. ^{[1
,2
]}

Hossain, N. ^{[3
,4
]}

Reinhard, S. ^{[1
,2
]}

Nattermann, L. ^{[1
,2
]}

Marko, I. P. ^{[3
,4
]}

Jin, S. R. ^{[3
,4
]}

Hild, K. ^{[3
,4
]}

Chatterjee, S. ^{[1
,2
]}

Stolz, W. ^{[1
,2
]}

Sweeney, S. J. ^{[3
,4
]}

Volz, K. ^{[1
,2
]}

机构：

[1] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[2] Univ Marburg, Fac Phys, D-35032 Marburg, Germany

[3] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[4] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

GAAS1-XBIX;

D O I：

10.1063/1.4811736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm(2) at an emission wavelength of similar to 947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system. (C) 2013 AIP Publishing LLC.

引用

页数：3

共 14 条

[1] Valence band anticrossing in GaBixAs1-x [J].