Polycrystalline silicon obtained by metal induced crystallization using different metals

被引：35

作者：

Pereira, L

Aguas, H

Martins, RMS

Vilarinho, P

Fortunato, E

Martins, R

机构：

[1] Univ Nova Lisboa, CENIMAT, Dept Mat Sci, Fac Sci & Technol, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

[3] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

polycrystalline silicon; metal induced crystallization; annealing;

D O I：

10.1016/j.tsf.2003.10.124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：334 / 339

页数：6

共 12 条

[1] Low-temperature crystallization of amorphous Si films using AICl3 vapor [J].